inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor IRF433 description silicon gate for fast switching at elevate rugged low drive requirements ease of paralleling applications high speed applications such as switching power supplies,ac and dcmotor controls relay and solenoid driver. absolute maximum ratings(t a =25 ) symbol arameter value unit v dss drain-source voltage (v gs =0) 450 v v gs gate-source voltage 20 v i d drain current-continuous@ tc=25 4.0 a p tot total dissipation@tc=25 75 w t j max. operating junction temperature -55~150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 0.83 /w r th j-a thermal resistance,junction to ambient 30 /w pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor IRF433 electrical characteristics (t c =25 ) symbol parameter conditions min type max unit v (br)dss drain-source breakdown voltage v gs =0; i d =0.25ma 450 v v gs(th) gate threshold voltage v ds = v gs ; i d =250 a 2 4 v r ds(on) drain-source on-stage resistance v gs =10v; i d =2.5a 2 i gss gate source leakage current v gs = 20v;v ds =0 100 na i dss zero gate voltage drain current v ds =450v; v gs =0 250 ua v sd diode forward voltage i f =4.5a; v gs =0 1.4 v ciss input capacitance v ds =25v; v gs =0v; f t =1mhz 600 pf crss reverse transfer capacitance 100 coss output capacitance 30 tr rise time i d =4.5a; v dd =250v; r g =12 11 17 ns td(on) turn-on telay time 15 23 tf fall time 35 53 td(off) turn-off delay time 15 23 pdf pdffactory pro www.fineprint.cn
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